Nanoveu Gets First 16nm ECS-DoT Silicon from TSMC

Nanoveu Limited (ASX:NVU) reports that its wholly owned semiconductor subsidiary Embedded A.I. Systems Pte. Ltd (EMASS) has received first engineering samples of its next-generation 16nm ECS-DoT edge AI system-on-chip from Taiwan Semiconductor Manufacturing Company, moving the design from tape-out into physical silicon.

The 16nm ECS-DoT was fabricated on TSMC's 16nm FinFET process after GDS sign-off in December 2025 and tape-out in January 2026. It sits alongside the commercially available 22nm ECS-DoT, with both devices sharing a common programming model, software stack and toolchain. Nanoveu says the 16nm chip carries a fully integrated Bluetooth Low Energy subsystem with on-chip analog and RF, expanded on-chip SRAM, a fine-grained power-management fabric, a dedicated object-detection accelerator protected by US Patent No. 12,651,452 B2, and the first hardware floating-point unit in the ECS-DoT family. Bring-up, benchmarking and characterisation will measure power, performance and functional behaviour across representative edge AI workloads, and the company intends to publish a summary of measured results when complete. More advanced process nodes remain under evaluation for future generations.

The announcement does not report measured power or performance results for the 16nm samples, or a commercial release timetable.